Current Issue
December 2024
Vol. 68
pISSN 1567-1739eISSN 1567-1739
Light-induced negative differential resistance effect in a resistive switching memory device
pISSN 1567-1739
eISSN 1567-1739
December 2024Dec 01, 2024Current IssueVol. 68
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Article 2024-12-31
Structural, morphological, compositional and optical properties of CoS2 thin films synthesized by adsorption-diffusion method
Vaiciukynaite K.; Zalenkiene S.; Ancutiene I.; Ivanauskas R.Curr. Appl. Phys. 2024; 68: 1-11Abstract : CoS2 thin films on PA 6 sheets were successfully formed by a two-step adsorption-diffusion method. A solution of pentathionate acid and a solution of Co(II) in complex form were used as a source for the formation of cobalt sulfide films. It has been established that increasing the duration of the first stage of the process, as well as increasing the temperature of the Co(II) precursor solution, plays a decisive role on the surface quality and positive physical properties of the resulting CoS2 films. The surface morphology, physical properties and elemental composition of the obtained CoS2 films have been investigated by means of XRD, SEM/EDS, ICP-OES and AFM. The formed CoS2 thin films exhibit a broad absorption edge with a high absorption coefficient (α ≈ 104 cm−1). UV–Vis studies of films have revealed a significant influence of film formation conditions on the values of their optical band gap. © 2024 Korean Physical Society
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Article 2024-12-31
Synthesis, dielectric and ferroelectric properties in BSCT ceramics
Neha; Mehta A.; Kumar P.; Kumar P.; Sharma P.; Prakash C.Curr. Appl. Phys. 2024; 68: 12-19Abstract : The present work is on the investigation of dielectric and ferroelectric properties of Ba(0.70-x) SmxCa0.30TiO3; BSCT (x = 0.000, 0.005, 0.010, 0.015, 0.020 and 0.030) ceramics. The samples were prepared by the conventional solid-state reaction route method. The perovskite tetragonal structure was confirmed by X-ray diffraction analysis. The dielectric constant ‘ε’ and tangent loss ‘tanδ’ was measured over a temperature range (30 °C–150 °C) and frequency (100 Hz–100 kHz). All the samples show very small value of tanδ (
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Review 2024-12-31
Hyperspectral microscopy of atomically thin materials
Lim S.; Lee J.-U.Curr. Appl. Phys. 2024; 68: 20-25Abstract : We introduce experimental configurations of hyperspectral microscopy employing atomically thin materials as an example. The optical spectrum acquired from atomically thin materials contains rich information regarding their properties, enabling nondestructive characterization. Confocal measurement schemes have been widely used to investigate atomically thin materials, offering precise spectral data from a specific sample position. However, investigating the spatial variation of optical spectrum is necessary for a comprehensive characterization. One- or two-dimensional type hyperspectral imaging provides an effective approach to analyze the spatial distribution of spectral information. In this review paper, we explain the concepts of hyperspectral imaging with several examples applied to study of atomically thin materials. © 2024 Korean Physical Society
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Article 2024-12-31
Spin-orbit torque with spin and orbital generation in Pt, Mn, and Pt0.5Mn0.5
Kim S.; Choi G.-M.Curr. Appl. Phys. 2024; 68: 26-30Abstract : The spin generation in strong spin-orbit coupling systems has led to a large spin-orbit torque. Recently, the orbital generation in weak spin-orbit coupling systems was reported. In this study, we investigate the spin-orbit torque of a nonmagnet/ferromagnet bilayer, where the nonmagnet is Pt, Mn, and Pt0.5Mn0.5 alloy, and the ferromagnet is Fe, Co, and Ni. The highest SOT efficiency, i.e., the spin Hall angle, of 0.32 was achieved with the Pt0.5Mn0.5/Ni structure, which is three times larger than 0.1 with the Pt/Ni structure. For the SOT mechanism, we discuss the enhanced orbital or spin generation in the PtMn alloy. © 2024 Korean Physical Society
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Article 2024-12-31
Stacking-dependent Van Hove singularity shifts in three-dimensional charge density waves of kagome metals AV3Sb5 (A = K, Rb, Cs)
Barman C.K.; Kim S.-W.; Kim Y.Curr. Appl. Phys. 2024; 68: 31-38Abstract : Vanadium-based kagomé systems AV3Sb5 (A = K, Rb, Cs) have emerged as paradigmatic examples exhibiting unconventional charge density waves (CDWs) and superconductivity linked to van Hove singularities (VHSs). Despite extensive studies, the three-dimensional (3D) nature of CDW states in these systems remains elusive. This study employs first-principles density functional theory and a tight-binding model to investigate the stacking-dependent electronic structures of 3D CDWs in AV3Sb5, emphasizing the significant role of interlayer coupling in behaviors of the VHSs associated with diverse 3D CDW orders. We develop a minimal 3D tight-binding model and present a detailed analysis of band structures and density of states for various 3D CDW stacking configurations, including those with and without a π-phase shift stacking of the inverse star of David, as well as alternating stacking of the inverse star of David and the star of David. We find that VHSs exist below the Fermi level even in 3D CDWs without π-phase shift stackings, and that these VHSs shift downward in the π-phase shift stacking CDW structure, stabilizing the 2×2×2 π-shifted inverse star of David distortions in alternating vanadium layers as the ground state 3D CDW order of AV3Sb5. Our work provides the electronic origin of 3D CDW orders, paving the way for a deeper understanding of CDWs and superconductivity in AV3Sb5 kagomé metals. © 2024 Korean Physical Society
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Article 2024-12-31
A comparative study on the electrical properties of Ba0.6Sr0.4TiO3 film capacitors with different top electrodes
Zhang X.; Fan X.; Ji S.; Cao Y.; Song J.; Li G.; Liu B.; Li X.; Zhang X.Curr. Appl. Phys. 2024; 68: 39-43Abstract : Au/Ba0.6Sr0.4TiO3 (BST)/La0.5Sr0.5CoO3 (LSCO) and Pt/BST/LSCO ferroelectric capacitors were successfully constructed on (001) LaAlO3 substrates via off-axis magnetron sputtering. X-ray diffraction (XRD) and Phi scan patterns confirmed that the BST film was epitaxial with an out-of-plane tetragonal phase. The ferroelectric and dielectric measurements reveal that, compared with the Pt/BST/LSCO capacitor, the Au/BST/LSCO capacitor exhibits a larger coercive field (∼139.7 kV/cm), smaller permanent polarization (∼2.94 μC/cm2), and lower tunability (∼65.22 %), which may be attributed to the higher difference in work function and weaker depolarization field screen effect of the top electrode, as well as smaller interfacial capacitance of the Au/BST interface than those of the Pt/BST interface. Therefore, based on series capacitor model and leakage behavior analysis, the thickness and dielectric constant of interfacial layer are quantitatively determined to be 3.52 nm and 12.13 for Pt/BST, and 4.42 nm and 5.82 for Au/BST, respectively. Our results pave a way for improving the dielectric performance in electrically tunable microwave devices. © 2024 Korean Physical Society
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Article 2024-12-31
Neural network-based recognition of multiple nanobubbles in graphene
Kim S.; Myoung N.; Jun S.; Go A.Curr. Appl. Phys. 2024; 68: 44-50Abstract : We present a machine learning method for swiftly identifying nanobubbles in graphene, crucial for understanding electronic transport in graphene-based devices. Nanobubbles cause local strain, impacting graphene's transport properties. Traditional techniques like optical imaging are slow and limited for characterizing multiple nanobubbles. Our approach uses neural networks to analyze graphene's density of states, enabling rapid detection and characterization of nanobubbles from electronic transport data. This method swiftly enumerates nanobubbles and surpasses conventional imaging methods in efficiency and speed. It enhances quality assessment and optimization of graphene nanodevices, marking a significant advance in condensed matter physics and materials science. Our technique offers an efficient solution for probing the interplay between nanoscale features and electronic properties in two-dimensional materials. © 2024 Korean Physical Society
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Article 2024-12-31
The electrical properties of Highly flexible ion gel capacitor based on PVDF
Liu R.; Wu Z.; Yin C.; Ba L.Curr. Appl. Phys. 2024; 68: 51-57Abstract : With the development of flexible electronics, ion gel has numerous applications in flexible devices, and it is crucial to explore the properties of ion gels. In this study, the ion gel is generated by loading the ionic liquid 1-Ethyl-3-methylimidazoline bis(trifluoromethylsulfonyl) imide in polymer Poly (vinylidene fluoride). The electrical characteristics were studied as a function of ionic liquid concentration, thickness, and temperature. The results show that the capacitance value with 20 % ionic liquid concentration can be as high as 2 μF/cm2 at 1 Hz, and the capacitance value is not affected by the gel thickness at frequencies lower than 1 kHz; the capacitance exhibits a positively correlated with the temperature in the temperature range of 30–80 °C; the capacitance is unaffected by bending curvature less than 1.67 mm−1. Meanwhile, we also established different circuit models to simulate the ion gel capacitors with different ionic concentrations, which provides a theoretical basis for flexible transistors. © 2024 Korean Physical Society
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Review 2024-12-31
Resolving exotic quantum states using scanning tunneling microscopy
Jeon S.; Oh M.Curr. Appl. Phys. 2024; 68: 58-70Abstract : Scanning tunneling microscopy (STM) is a pivotal surface-imaging technique that reveals intricate atomic and electronic structures. Its remarkable subatomic spatial resolution, coupled with the energy-resolved local density of states, provides insights into both the local electronic properties and global band structures. Recent advancements in STM, including a breakthrough in charge-density manipulation, have broadened the scope of its research. This review delves into the experimental methodologies for probing the electronic structures of various topological materials, including topological insulators, semimetals, and superconductors. It explores techniques such as Landau-level spectroscopy and quasi-particle interference measurements. Additionally, it examines the influence of topological phase transitions and electron correlations that can be modulated by in situ electrical fields in two-dimensional samples. © 2024 Korean Physical Society
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Article 2024-12-31
Electrochemical properties of electroless plated FeCoNi on cellulose filter paper
Ghanashyam G.; Gu M.; Lamouri R.; Kim K.H.; Jeong H.K.Curr. Appl. Phys. 2024; 68: 71-77Abstract : Iron (Fe), nickel (Ni), and cobalt (Co) coated cellulose papers were synthesized via the electroless plating method, and their electrochemical properties were investigated for flexible supercapacitor applications. Three different concentrations of FeCoNi to distilled water on cellulose paper were prepared, and it affected morphology and crystal structure, resulting in different surface area, porosity, and impedance. The best performance obtained was specific capacitance of 75 ± 0.5 Fg-1 at 1 Ag-1, specific energy of 7 Whkg−1, and specific power of 400 Wkg-1 with capacitance retention of 88.2 % and coulombic efficiency of 83 % after 1000 cycles. © 2024 Korean Physical Society
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Article 2024-12-31
Enhanced electrical performance and stability of solution-processed oxide semiconductor thin-film transistors via an incorporation of deionized water oxidizer
Zhang X.; Mude N.N.; Cho S.W.Curr. Appl. Phys. 2024; 68: 78-84Abstract : Solution-processed amorphous oxide semiconductor thin films contain poor metal-oxygen-metal (M-O-M) networks and numerous impurities, making it difficult to manufacture high-performance semiconductor devices with excellent stability. In this study, we enhance the electrical performance and device stability of solution-processed oxide thin-film transistors (TFTs) by incorporating water molecular oxidants. In solution, a water molecule can be easily incorporated by adding deionized water (DW) to the precursor solution. The DW-incorporated precursor solutions induced the production of oxide semiconductor thin films with improved M-O-M networks and fewer defect states. Therefore, compared to conventional case, the DW-incorporated indium zinc oxide (InZnO) TFT showed improved device performances and significantly reduced changes of threshold voltage under positive gate bias stress and negative gate bias/illumination stress conditions. This approach of incorporating DW into the precursor solutions provides a promising route for fabricating high-quality amorphous semiconductor films and transistor devices. © 2024 The Authors
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Article 2024-12-31
An efficient and miniaturized ultra-thin tunable UWB graphene metasurface absorber for terahertz gap regime
Maurya N.K.; Ghosh J.; Kumari S.; Ram G.C.; Krishna R.Curr. Appl. Phys. 2024; 68: 85-97Abstract : This work introduces an ultra-thin tunable ultra-wideband (UWB) metasurface absorber (MSA) for the terahertz (THz) gap. The polarization-insensitive MSA provides an absorptivity (A(f)) ≥ 90% from 0.1 to 11.5 THz, corresponding to 196.6% fractional bandwidth. The usage of resonant slots engraved on top patterned graphene sheet (Gpat) and strong plasmonic coupling in the Fabry-Perot cavity formed between top Gpat and bottom continuous graphene (Gcont) in bilayer stack configuration ensures absorptivity over a UWB THz spectrum. An equivalent circuit model (ECM) closely follows the A(f) response of the proposed MSA. The proposed DC-biasing mechanism can regulate the chemical potential (μc) of the connected Gcont efficiently. A DC bias voltage of 0 to 6.1 V is adequate to vary μc of Gcont from 0 to 0.6 eV for achieving tunable A(f). The structure maintains its ultra-thin nature and has a thickness of only λ0/1500, where λ0 is the free space wavelength calculated at 0.1 THz. In addition, the periodicity is only λ0/300. The MSA also provides stable absorption response from 0.1 to 11.5 THz with A(f) ≥ 80% for incidence angle (θ) up to 60∘ under both transverse magnetic (TM) and transverse electric (TE) polarization. © 2024 Korean Physical Society
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December, 2024 | Volume 68
CAP Impact
• Journal Impact factor 2.4
• Elsevier Site Score 4.8
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- 회수 : 월 1회
- 언어 : 영어
- 분야 : 응용물리학 전반
- 2001년부터 Current Applied Physics의 영문 국제학술지로 탄생.
- SCI에 등재된 국제학술지
- 인용지수 2.4 (2023년)
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pISSN 1226-4512
eISSN 2093-3827
