Article

Article

Curr. Appl. Phys. 2024; 60: 64-69

Published online April 30, 2024 https://doi.org/10.1016/j.cap.2024.01.013

Copyright © The Korean Physical Society.

High frequency permittivity of rare-earth Er-doped MoS2 films

Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China

Abstract

Two-dimensional (2D) MoS2 has attracted considerable attention for their significant potential application in high-frequency electronic devices. In this work, erbium doped MoS2 (Er:MoS2) film is prepared by chemical vapor deposition. The structures and binding energy are studied by X-ray photoelectron spectroscopy indicating the substitution of Er atoms into MoS2 lattices. The complex permittivity of the film is measured by the microstrip line up to the frequency of 4 GHz. The high frequency permittivity ε′ of MoS2 film is 4.11 and ε′ increases about 28% when the Er doping amount is 0.83 at% (atomic percentage). The permittivity of Er:MoS2 film is higher than that of MoS2 film, which is mainly due to the enhanced polarization of Er:MoS2 film. The permittivity ε′ of Er:MoS2 film increases with the increase of Er doping (0∼0.83 at%). It is believed that Er:MoS2 film has great potential application in tunable electromagnetic devices. © 2024 Korean Physical Society

Keywords: Electromagnetic properties, Permittivity, Transition metal dichalcogenides, Tunable electromagnetic devices

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