Curr. Appl. Phys. 2024; 60: 43-56

Published online April 30, 2024

Copyright © The Korean Physical Society.

Recent technical advancements in ARPES: Unveiling quantum materials

Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 34141, South Korea; Department of Physics, Ajou University, Suwon, 16499, South Korea; Department of Physics, Research Institute of Natural Science, Gyeongsang National University, Jinju, 52828, South Korea; Research Institute of Molecular Alchemy, Gyeongsang National University, Jinju, 52828, South Korea; Department of Physics, Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, 24341, South Korea


The technical evolution of angle-resolved photoemission spectroscopy (ARPES) in the late 90s played a pivotal role in the exploration of electronic structures in condensed matter systems. ARPES achieved numerous successes during this period, notably capturing the first evidence of the unconventional d-wave symmetry of the superconducting gap in cuprate superconductors. It also elucidated the essential rules governing topological signatures in the electronic structures of topological materials, and played an essential role in demonstrating the engineered band structures of atomically thin materials. These early achievements spurred significant advancements in the technique. This topical review delves into four cutting-edge ARPES techniques that are currently at the forefront of development: time-resolved ARPES, nano ARPES, in-situ ARPES, and ARPES with novel control parameters. By examining the capabilities of these innovative approaches, we aim to illustrate their potential in unlocking new frontiers and providing unprecedented insights on the electronic structure of quantum materials. © 2024 The Author(s)

Keywords: Angle-resolved photoemission spectroscopy, In-situ surface doping, Molecular beam epitaxy, Nano ARPES, Time-resolved ARPES, Uniaxial strain

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