Article

Article

Curr. Appl. Phys. 2024; 60: 1-8

Published online April 30, 2024 https://doi.org/10.1016/j.cap.2024.01.005

Copyright © The Korean Physical Society.

Parametric dependence of CsPbI2Br perovskite film growth using a mist chemical vapor deposition method

Department of Energy Convergence Engineering, Cheongju University, Eumseoung-gun Chungbuk, 27739, South Korea

Abstract

Using an atmospheric mist chemical vapor deposition, we successfully fabricated inorganic CsPbI2Br films under various growth conditions. The process condition of the film growth was experimentally determined as follows: 0.4 M CsPbI2Br precursor in a mixed solvent with a 4:1 ratio (v/v %) of N, N-dimethylformamide and dimethyl sulfoxide, carrier and dilution N2 flow rates of 200 and 1500 cc/min, substrate temperature of 68 °C, and growth time of 35 min. In the characterization of the structural and optical properties, all the films exhibited a well-defined α-CsPbI2Br cubic crystal structure and optical bandgap energy of 1.914 eV. For the preparation of smooth defect-free CsPbI2Br films, it is crucial to maintain a growth condition with a narrow operation tolerance to stabilize the amount of precursor mist that flows through a rectangular channel reactor with a proper ratio of ∼1/10 for the carrier-to-dilution N2 gas flow rate at the low substrate temperature of 68 °C. © 2024 Korean Physical Society

Keywords: Atmospheric mist chemical vapor deposition, CsPbI2Br perovskite film growth, Growth temperature, N2 gas flow rates, Precursor molar concentration

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