Curr. Appl. Phys. 2025; 70: 81-86
Published online February 28, 2025 https://doi.org/10.1016/j.cap.2024.11.015
Copyright © The Korean Physical Society.
Wu Y.H.; Kim H.H.; Shin J.C.
Department of Electronics and Electrical Engineering, Dongguk University-Seoul, 30 Pildong-ro 1-gil Jung-gu, Seoul, 04620, South Korea; Korea Photonics Technology Institute, 208 Cheomdangwagi-ro Buk-gu, Gwangju, South Korea
InAs exhibits high electron mobility, positioning it as a promising candidate for advanced nanoelectronic device materials. Specifically, nanowire structures are particularly advantageous for electronic device applications, offering benefits such as reduced leakage current and minimized short-channel effects due to their distinctive one-dimensional electron transport characteristics. However, the large surface-to-volume ratio of the nanowires not only significantly degrades their electrical properties but also complicates the formation of semiconductor-metal ohmic contacts. In this study, surface treatments involving sulfur and (NH4)2S, along with rapid thermal annealing (RTA) processes, were applied to mitigate these disadvantages, resulting in a marked enhancement of the electrical properties of InAs nanowires. The electron mobility of the InAs nanowires was elevated from 83.06 cm2/V·s to 292.718 cm2/V·s through the application of passivation and RTA processes. © 2024
Keywords: InAs, Metal-organic chemical vapor deposition, Nanowires, Rapid thermal annealing, Sulfur passivation
![]() |
![]() |
![]() |
![]() |