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Article

Curr. Appl. Phys. 2024; 66: 42-48

Published online October 31, 2024 https://doi.org/10.1016/j.cap.2024.06.007

Copyright © The Korean Physical Society.

Optimization of metal-insulated-semiconductor field-effect-transistor for the formation of two-dimensional electron gas in dopant-free systems

Kim D.-H.; Jang H.-S.; Hong C.; Seo M.; Lee H.; Lee S.-J.; Myoung N.; Lee D.; Son S.-K.; Chun Y.T.

Department of Physics, Kyung Hee University, Seoul, 02447, South Korea; School of Semiconductor Science & Technology Jeonbuk National University, Jeonju, 54896, South Korea; Department of Condensed Matter, Weizmann Institute of Science, Rehovot, Israel; Division of Physical Metrology, Korea Research Institute of Standard and Science, Daejeon, 34141, South Korea; Department of Physics, Konkuk University, Seoul, 05029, South Korea; Chemical Materials Solutions Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, South Korea; Department of Physics Education, Chosun University, Gwangju, 61472, South Korea; Institute of Well-Aging Medicare & Chosun University LAMP Center, Chosun University, Gwangju, 61472, South Korea; Department of Physics, Korea University, Seoul, 02841, South Korea; Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea; Division of Electronics and Electrical Information Engineering, Korea Maritime & Ocean University, Busan, 49112, South Korea

Abstract

We developed a geometry of metal-insulated-semiconductor field-effect-transistor for the formation of two-dimensional electron gas (2DEG) in dopant-free GaAs/AlGaAs heterostructures in which the conduction band can be modulated by external electric field. We showed two different kinds of device processes: for simple device fabrication and for the uniform 2DEG. We optimized the process of ohmic contacts and the gate geometry for the high quality 2DEG in a triangular quantum well formed at the GaAs/AlGaAs heterointerface. We use these two types of devices to perform a direct comparison of the magneto-transport properties at a low temperature (1.2 K) to get a relationship between the induced carrier density and external electric field. By using our developed fabrication process, the tunability of a high-quality 2DEG was obtained with a carrier density ranging from 0.8 to 2.3 × 1011 cm−2, for which the corresponding mobility ranged 1.5 to 3.3 × 106 cm2 V−1 s−1. Also, we demonstrated that the 2DEG is well established with a suitable depth, 120 nm below the surface (near the GaAs/AlGaAs heterointerface) which is calculated by the capacitance model. © 2024 Korean Physical Society

Keywords: GaAs/AlGaAs heterostructure, None-intentional doping, Two-dimensional electron gas

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