Article

Article

Curr. Appl. Phys. 2024; 66: 24-29

Published online October 31, 2024 https://doi.org/10.1016/j.cap.2024.06.012

Copyright © The Korean Physical Society.

Strain-insensitive ferromagnetic SrRuO3 thin films with ferrimagnetic CoFe2O4 buffer layer

Hong J.E.; Choi Y.U.; Ahn H.S.; Lama B.; Kim J.H.; Paudel T.R.; Lee J.-W.; Jung J.H.

Department of Physics, Inha University, Incheon, 22212, South Korea; Department of Physics, South Dakota School of Mines and Technology, Rapid City, 57701, SD, United States; Department of Materials Science and Engineering, Hongik University, Sejong, 30016, South Korea

Abstract

Flexible electronics, such as wearable devices and biosensors, require materials that maintain their properties under mechanical stress. A recent study addresses this by focusing on SrRuO3 (SRO) thin films, which typically suffer reduced coercivity under strain. Herein, we introduce a novel approach by using CoFe2O4 (CFO) as a buffer layer in SRO/CFO/F-mica heterostructures to address this issue. When subjected to a strain of up to ±0.553 %, these heterostructures displayed a mere 11 % variation in saturation magnetic moment and coercive field, significantly outperforming SRO/BaTiO3 configurations, which showed a 95 % reduction in coercivity at only −0.3 % strain. This result demonstrates the effectiveness of the CFO layer in stabilizing the magnetic properties of SRO films against external mechanical deformations. These findings mark a significant advancement in the development of mechanically robust thin films for complex oxide heterostructures in flexible device applications. © 2024 Korean Physical Society

Keywords: CoFe2O4, Magnetic property, Mechanical strain, Pulsed laser deposition, SrRuO3

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