Influence of phase state, conducting sublayer material and deposition method on mechanical properties and adhesion of Ge2Sb2Te5 thin films

Yakubov A.; Lazarenko P.; Kirilenko E.; Sagunova I.; Babich A.; Sherchenkov A.

doi:10.1016/j.cap.2024.06.014

Article

Curr. Appl. Phys. 2024; 66: 66-75

Published online October 31, 2024 https://doi.org/10.1016/j.cap.2024.06.014

Influence of phase state, conducting sublayer material and deposition method on mechanical properties and adhesion of Ge2Sb2Te5 thin films

Yakubov A.; Lazarenko P.; Kirilenko E.; Sagunova I.; Babich A.; Sherchenkov A.

National Research University of Electronic Technology, Shokina Square, Building 1, Zelenograd, Moscow, Russian Federation; Institute of Nanotechnology of Microelectronics of the RAS, Bld. 16A/11, Nagatinskaya street, Moscow, Russian Federation

Abstract

Go to
Abstract

Ge2Sb2Te5 (GST225) thin films are used as a functional element in multilayer cells of phase change random access memory (PCRAM, PCM) and have good prospects in electrically driven tunable reflective metasurfaces and on-chip waveguide devices, including those implemented on a flexible substrate. Knowledge of the mechanical properties of GST225 thin films, their adhesion to conductive layers, and the correct choice of conductive material is critical to the reliable operation of these devices. The present work focuses on the effect of phase change on mechanical parameters such as hardness, Young's modulus and stiffness, as well as on the adhesion of GST225 thin films to various metal sublayers (Al, Ti, TiN, W, Ni). The formation of GST225 films was carried out by vacuum thermal evaporation and DC magnetron sputtering, which made it possible to study layers with different distributions of elements over the thickness. © 2024

Keywords: Adhesion strength, Chalcogenides, Ge₂Sb₂Te₅, Mechanical properties, Surfaces, Thin films