Current Applied Physics :eISSN 1567-1739 / pISSN 1567-1739

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Y. RH.  Modeling and analysis of the effects of inhomogeneous carrier distributions in InGaN multiple quantum wells.  Curr. Appl. Phys. 2020;20:1351-1358.  https://doi.org/10.1016/j.cap.2020.09.005