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J.h. M, I.h. K, H.w. K, O. S, W. B, W. HM.  TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing.  Curr. Appl. Phys. 2020;20:1386-1390.  https://doi.org/10.1016/j.cap.2020.09.003