2020; 20(3): 438-444
Published online January 10, 2020 https://doi.org/10.1016/j.cap.2020.01.002
Copyright © The Korean Physical Society.
Arepalli V.K., Nguyen T.D., Kim J.
Department of Energy Convergence Engineering, Cheongju University, Cheongju, South Korea; Institute of Theoretical and Applied Research, Duy Tan University, Hanoi, 100000, Viet Nam
Correspondence to:Kim, JehaDepartment of Energy Convergence Engineering, Cheongju University
We fabricated the SnS/Ag/SnS (SAS) trilayer thin films by a sputtering method at 200 °C. The structural, optical, and electrical properties of the films were studied by varying the Ag interlayer thickness from 9 to 27 nm. The EDS analysis revealed that all SAS trilayer films showed an increase in the atomic percentage of Ag from 1.87 to 6.18. The X-ray diffraction studies confirmed that SAS films with Ag-18 nm thickness showed a preferred (111) peak of the SnS with improved crystallinity. The optical absorption coefficient of the SAS films increased by a factor of 18 when compared to the SnS films without Ag. Also, the optical band gap decreased from 1.53 to 1.28 eV with Ag thickness. All SAS films exhibited the p-type conductivity with increased hole-concentration from 1.94 × 1014 to 4.15 ×1018cm−3 and also the mobility from 1.31 to 81.6 cm2. V−1s−1. © 2020 Korean Physical Society
Keywords: Ag interlayer, RF-Sputtering, Sandwich structure, SnS/Ag/SnS trilayer films
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