Article

2020; 20(3): 451-455

Published online January 14, 2020 https://doi.org/10.1016/j.cap.2020.01.007

Copyright © The Korean Physical Society.

Quantum interference effect in few-layered transition metal dichalcogenide

Park J., Yoshida K., An S.J., Hirakawa K., Jung M., Seo J.

Department of Emerging Materials Science, DGIST, 333 Techno Jungang-daero, Hyeonpung-myeon, Dalseong-gun, Daegu, 42988, South Korea; Center for Photonics Electronics Convergence, IIS, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan; Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan; DGIST Research Institute, DGIST, 333 Techno Jungang-daero, Hyeonpung-myeon, Dalseong-gun, Daegu, 42988, South Korea

Correspondence to:Seo, Jungpil
Emerging Materials Science

Received: October 17, 2019; Accepted: January 8, 2020

Abstract

Van der Waals layered transition metal dichalcogenides (TMDCs), as atomically flat two-dimensional materials, have been studied extensively in both fundamental science and application fields in recent years. The reduced-dimensional properties of TMDCs not only provide a route for the fabricating of efficient field effect transistors and optoelectronic devices but also suggest the possibility of the devices that utilize quantum coherency. In this work, we characterize the electron transport properties of ReS2, one of the TMDCs, at both room temperature and low temperature. Of particular note, we measured strong quantum conductance oscillations as a function of the gate voltages and source-drain voltages at reduced temperature, which is evidence of quantum coherent transport. This work unambiguously establishes ReS2 as a promising candidate for future quantum materials. © 2020

Keywords: Fabry-Pérot, Quantum interference, ReS2, TMDC, UCF

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