Article

Article

Curr. Appl. Phys. 2020; 20(12): 1342-1350

Published online December 31, 2020 https://doi.org/10.1016/j.cap.2020.09.004

Copyright © The Korean Physical Society.

Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors

Chien N.D., Vinh L.T., Hong Tham H.T., Shih C.-H.

Faculty of Physics and Nuclear Engineering, Dalat University, Lam Dong, 670000, Viet Nam; Faculty of Electronic Technology, Industrial University of Ho Chi Minh City, Ho Chi Minh City, 700000, Viet Nam; Graduate University of Science and Technology, Vietnam Academy of Science and Technology, Ha Noi, 100000, Viet Nam; Hoang Hoa Tham Senior High School, Khanh Hoa, 650000, Viet Nam; Department of Electrical Engineering, National Chi Nan University, Nantou, 54561, TaiwanChien, N.D., Faculty of Physics and Nuclear Engineering, Dalat University, Lam Dong, 670000, Viet Nam; Vinh, L.T., Faculty of Electronic Technology, Industrial University of Ho Chi Minh City, Ho Chi Minh City, 700000, Viet Nam; Hong Tham, H.T., Graduate University of Science and Technology, Vietnam Academy of Science and Technology, Ha Noi, 100000, Viet Nam, Hoang Hoa Tham Senior High School, Khanh Hoa, 650000, Viet Nam; Shih, C.-H., Department of Electrical Engineering, National Chi Nan University, Nantou, 54561, Taiwan

Correspondence to:Chien, N.D.
Faculty of Physics and Nuclear Engineering, Dalat University, Department of Electrical Engineering, National Chi Nan UniversityViet Nam
email: chiennd@dlu.edu.vn

Abstract

In this study, we examined the influence of using hetero-gate dielectrics (HGDs) on the short-channel effects (SCEs) in scaled tunnel field-effect transistors (TFETs). For bulk TFETs, the short-channel performance is not influenced by the HGD engineering because the SCEs are caused by the tunneling at the region with negligible gate control. However, the use of the HGD increases the SCEs in double-gate TFETs because the HGD reduces the gate control on the channel. When the HGD optimized in term of on-current is used, the channel of HGD-TFETs is about 10-nm longer than that of uniform-gate dielectric TFETs to obtain similar SCEs. The SCEs in HGD-TFETs can be improved by locating the drain-side heterojunction toward the drain and/or increasing the ratio of low- and high-k equivalent oxide thicknesses. Due to the trend of scaling transistors, an appropriate design of HGD to minimize the SCEs in scaled HGD-TFETs is also crucial. © 2020 Korean Physical Society

Keywords: Band-to-band tunneling, Double-gate, Hetero-gate dielectric, Short-channel effect, Tunnel field-effect transistor

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