Article

Article

Curr. Appl. Phys. 2020; 20(12): 1386-1390

Published online December 31, 2020 https://doi.org/10.1016/j.cap.2020.09.003

Copyright © The Korean Physical Society.

TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

Moon J.H., Kang I.H., Kim H.W., Seok O., Bahng W., Ha M.-W.

Power Semiconductor Research Center, Power Apparatus Research Division, Korea Electrotechnology Research Institute, 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon-si, Gyeongsangnam-do, 51543, South Korea; Department of Electrical Engineering, Myongji University, Yongin, 17058, South KoreaMoon, J.H., Power Semiconductor Research Center, Power Apparatus Research Division, Korea Electrotechnology Research Institute, 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon-si, Gyeongsangnam-do, 51543, South Korea; Kang, I.H., Power Semiconductor Research Center, Power Apparatus Research Division, Korea Electrotechnology Research Institute, 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon-si, Gyeongsangnam-do, 51543, South Korea; Kim, H.W., Power Semiconductor Research Center, Power Apparatus Research Division, Korea Electrotechnology Research Institute, 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon-si, Gyeongsangnam-do, 51543, South Korea; Seok, O., Power Semiconductor Research Center, Power Apparatus Research Division, Korea Electrotechnology Research Institute, 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon-si, Gyeongsangnam-do, 51543, South Korea; Bahng, W., Power Semiconductor Research Center, Power Apparatus Research Division, Korea Electrotechnology Research Institute, 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon-si, Gyeongsangnam-do, 51543, South Korea; Ha, M.-W., Department of Electrical Engineering, Myongji University, Yongin, 17058, South Korea

Correspondence to:Moon, J.H.
Power Semiconductor Research Center, Power Apparatus Research Division, Korea Electrotechnology Research Institute, 12, Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon-si, South Korea
email: jhmoon@keri.re.kr

Abstract

The use of SiO2/4H–SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) can be problematic due to high interface state density (Dit) and low field-effect mobility (μfe). Here, we present a tetra-ethyl-ortho-silicate (TEOS)-based low-pressure chemical vapor deposition (LPCVD) method for fabricating the gate oxide of 4H–SiC MOSFETs using nitric oxide post-deposition annealing. SiO2/4H–SiC MOS capacitors and MOSFETs were fabricated using conventional wet and TEOS oxides. The measured effective oxide charge density (Qeff) and Dit of the TEOS-based LPCVD SiO2/4H–SiC MOS capacitor with nitridation were 4.27 × 1011 cm−2 and 2.99 × 1011 cm−2eV−1, respectively. We propose that the oxide breakdown field and barrier height were dependent on the effective Qeff. The measured μfe values of the SiO2/4H–SiC MOSFETs with wet and TEOS oxides after nitridation were, respectively, 11.0 and 17.8 cm2/V due to the stable nitrided interface between SiO2 and 4H–SiC. The proposed gate stack is suitable for 4H–SiC power MOSFETs. © 2020 Korean Physical Society

Keywords: 4H–SiC, Gate oxide, LPCVD, MOSFETs, Nitridation, NO POA, TEOS

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